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TC75W60FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC75W60FU, TC75W60FK
Dual Operational Amplifier
TC75W60FU
Features
* * * * * High slew rate : SR (VDD = 3 V) = 5.1 V/s (typ.) Single and dual power Supply operations are possible. : VDD = 0.9 to 3.5 V or 1.8 to 7 V Lower supply current than general-purpose bipolar type op amps : IDD (VDD = 3 V) = 660 A (typ.) The internally phase compensated operational amplifier. Small package
TC75W60FK
Weight SSOP8-P-0.65 : 0.021 g (typ.) SSOP8-P-0.50A : 0.01 g (typ.)
Absolute Maximum Ratings (Ta = 25C)
Characteristics Supply voltage Differential input voltage Input voltage Power dissipation TC75W60FU TC75W60FK Symbol VDD, VSS DVIN VIN PD Topr Tstg Rating 7 7 VDD to VSS 250 200 -40 to 85 -55 to 125 Unit V V V mW C C
Operating temperature Storage temperature
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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TC75W60FU/FK
Marking (top view)
TC75W60FU 8 7 6 5 Type name Lot No. TC75W60FK 8 7 6 5
Pin Connection (top view)
VDD 8 OUT IN (-) IN (+) 7 6 5
5W60
5W 60 1 2 3 4 1 2 3 4 OUT IN (-) IN (+) VSS
1
2
3
4
Electrical Characteristics
DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25C)
Characteristics Input offset voltage Input offset current Input bias current Common mode input voltage Voltage gain (open loop) Maximum output voltage Common mode rejection ratio Suuply voltage rejection ratio Supply current Source current Sink current Symbol VIO IIO II CMVIN GV VOH VOL CMRR SVRR IDD Isource Isink Test Circuit Test Condition RS = 1 k RL = 100 k RL = 100 k VIN = 0.0 to 2.1 V VDD = 1.8 to 7.0 V Min 0.0 60 2.9 54 60 330 600 Typ. 2 1 1 70 70 70 660 700 1250 Max 7 2.1 0.1 1000 Unit mV pA pA V dB V dB dB A A A

DC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25C)
Characteristics Input offset voltage Input offset current Input bias current Common mode input voltage Voltage gain (open loop) maximum output voltage Common mode rejection ratio Supply current Source current Sink current Symbol VIO IIO II CMVIN GV VOH VOL CMRR IDD Isource Isink Test Circuit Test Condition RS = 1 k RL = 100 k RL = 100 k VIN = 0.3 to 0.9 V Min 0.3 1.7 50 300 550 Typ. 2 1 1 70 60 600 700 1150 Max 7 0.9 0.1 900 Unit mV pA pA V dB V dB A A A

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AC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25C)
Characteristics Slew rate Unity gain cross frequency Symbol SR fT Test Circuit Test Condition Min Typ. 5.1 3.7 Max Unit V/s MHz
AC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25C)
Characteristics Slew rate Unity gain cross frequency Symbol SR fT Test Circuit Test Condition Min Typ. 4.0 3.0 Max Unit V/s MHz
TEST CIRCUIT
(1) SVRR, VIO
VDD RF RS VOUT RS RF * * SVRR VDD = 1.5 V : VDD = VDD1, VOUT = VOUT1 VDD = 7.0 V : VDD = VDD2, VOUT = VOUT2
V 1 - V OUT 2 RS SVRR = 20 log OUT x V 1- V 2 RF + RS DD DD
VIO
RS VDD x VIO = V OUT - 2 RF + RS
VDD/2
(2)
CMRR, CMVIN
VDD RF RS VOUT RF VIN RS
*
CMRR VIN = 0.0 V : VIN = VDD1, VOUT = VOUT1 VIN = 2.5 V : VIN = VDD2, VOUT = VOUT2
V 1 - V OUT 2 RS CMRR = 20 log OUT x RF + RS VIN1 - VIN 2
*
CMVIN
VDD/2
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(3) VOH
VDD
*
VOH
VIN1 = VDD - 0.05 V 2
VOH RL
VIN2 =
VDD + 0.05 V 2
VIN1
VIN2
(4) VOL
VDD
*
VOL VIN1 = VDD + 0.05 V 2 VDD - 0.05 V 2
RL VOL
VIN2 =
VIN1
VIN2
(5)
IDD
VDD M IDD
VDD/2
(6) Isource
(7)
Isink
VDD
VDD
M
M
VDD 2
VDD - 0.1 V 2
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IDD - VDD
1000 Ta = 85C 2.0
Isink - VDD
(A)
(mA)
800
1.6
Ta = -40C
IDD
600
Ta = -40C Ta = 25C
Isink
1.2 Ta = 25C 0.8 Ta = 85C
Supply current
400
200 VSS = GND VIN = VDD/2 0 0 1 2 3 4 5 6 7
Sink current
0.4 VSS = GND 0 0 1 2 3 4 5 6 7
Supply voltage
VDD
(V)
Supply voltage
VDD
(V)
VOL - Isink
2.0 3 Ta = 85C 1.6
VOL - Isink
(V)
(V)
Ta = 85C
VOL
VOL
2
"L" level output voltage
1.2
Ta = -40C
"L" level output voltage
Ta = 25C
Ta = 25C Ta = -40C
0.8
1
0.4 VDD = 1.8 V VSS = GND 0 0 0.5 1.0 1.5
VDD = 3 V 0 0 VSS = GND 0.5 1.0 1.5
Sink current
Isink
(mA)
Sink current
Isink
(mA)
VOL - Isink
5 1.5 VDD = 5 V 4 Ta = 85C
Isource - VDD
(V)
Isource (mA)
VSS = GND
VOL
1.0
"L" level output voltage
3
Ta = 25C Ta = -40C
Ta = 85C
Source current
Ta = 25C Ta = -40C 0.5
2
1
VSS = GND 0 0 1 2 3 4 5 6 7
0 0
0.5
1.0
1.5
Sink current
Isink
(mA)
Supply voltage
VDD
(V)
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TC75W60FU/FK
VOH - Isource
2.0 3
VOH - Isource
(V)
(V)
VOH
"H" level output voltage
1.2
"H" level output voltage
VOH
1.6
2.5
Ta = -40C Ta = 85C Ta = 25C
0.8
Ta = -40C Ta = 25C Ta = 85C VDD = 1.8 V VSS = GND
0.4
VDD = 3 V 0 0 VSS = GND 0.5 1
0 0
0.5
1
Source current
Isource (mA)
Source current
Isource (mA)
VOH - Isource
5 2
VOH - RL
(V)
VOH
(V)
Ta = -40C Ta = 85C Ta = 25C
"H" level output voltage
"H" level output voltage
VOH
2.5
1
Ta = 85C
Ta = -40C Ta = 25C
VDD = 5 V VSS = GND 0 0 0.5 1
VDD = 1.8 V VSS = GND 0 100 1k 10 k 100 k 1M
Source current
Isource (mA)
Load resistance
RL
()
VOH - RL
3 5
VOH - RL
(V)
(V)
2.5
VOH
VOH
Ta = 85C Ta = -40C 2.5
"H" level output voltage
Ta = 25C
"H" level output voltage
Ta = 85C
Ta = -40C
Ta = 25C
VDD = 3 V 0 100 VSS = GND 1k 10 k 100 k 1M
VDD = 5 V VSS = GND 0 100 1k 10 k 100 k 1M
Load resistance
RL
()
Load resistance
RL
()
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Pulse response
1.1 0.9 0.7 Input Ta = 85C
(Rise)
1.1 0.9 0.7
Pulse response
(Fall)
Output Ta = -40C Ta = 25C
(V)
Ta = -40C 0.5 Ta = 25C
(V)
0.5
Voltage
0.3 0.1 0
Voltage
Output
0.3 Input 0.1 0 Ta = 85C
VDD = 1.8 V VSS = GND 0 100 200 300 400
VDD = 1.8 V VSS = GND 0 100 200 300 400
time
(ns)
time
(ns)
Pulse response
3
(Rise)
3
Pulse response
(Fall)
VDD = 3 V VSS = GND
Input 2
(V)
Ta = -40C Ta = 25C 1
(V)
Ta = 85C
2
Output
Voltage
Voltage
1
Ta = -40C Ta = 25C Ta = 85C
0
Output
VDD = 3 V VSS = GND 400 600 800
0 Input 0 200 400 600 800
0
200
time
(ns)
time
(ns)
Pulse response
6
(Rise)
6
Pulse response
(Fall)
VDD = 5 V VSS = GND
Input 4 4 Ta = 85C Ta = -40C Ta = 25C 2
(V)
(V)
Output
Voltage
Voltage
2
Ta = -40C Ta = 25C Ta = 85C
Output 0 VDD = 5 V VSS = GND 0 0.4 0.8 1.2 1.6 0
Input 0 0.4 0.8 1.2 1.6
time
(s)
time
(s)
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TC75W60FU/FK
GV - f
120 VDD = 3 V Ta = 25C 80 300 VSS = GND
PD - Ta
Note)
(dB)
(mW)
SM8
PD
GV
200
US8
Power dissipation
100 1k 10 k 100 k 1M 10 M
Voltage gain
40
100
0 10
0 -40
0
40
80
120
Frequency f
(Hz)
Ambient temperature
Ta
(C)
Note): These power dissipation curves are given by measurement of only IC on the air and, in general, it become higher when mounted on PCB. Since the power dissipation depends on mounted condition, please be sure to design.
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TC75W60FU/FK
Package Dimensions
Weight: 0.021 g (typ.)
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TC75W60FU/FK
Package Dimensions
Weight: 0.01 g (typ.)
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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